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Direct feature extraction from two-dimensional X-ray diffraction images of semiconductor thin films for fabrication analysis

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DataCite Commons2022-12-12 更新2024-07-29 收录
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https://tandf.figshare.com/articles/dataset/Direct_feature_extraction_from_two-dimensional_X-ray_diffraction_images_of_semiconductor_thin_films_for_fabrication_analysis/19085880
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We built a workflow for the fabrication analysis of thin films by applying machine-learning (ML) techniques directly to the measurement data. This will lower the problem in cost of synthesizing and analyzing samples to improve the fabrication conditions. The workflow combines two ML techniques: non-negative matrix factorization (NMF) and variational autoencoder (VAE). The measurement data were two-dimensional X-ray diffraction of indium-gallium oxide system thin films. The thin films were fabricated by physical vapor techniques under multiple conditions. First, the workflow was applied to the data of the thin films fabricated through pulsed laser deposition as a proof of concept. We found that our workflow extracted features that represented crystallinity differences in addition to substrate differences. Second, VAE was analyzed to determine whether it could generate new data from its latent space. The latent space of the VAE, which learned the extracted features, represented the relationship between the fabrication conditions such as laser intensities and crystallinity. Third, the inference ability of the new data fabricated through sputtering was evaluated. The capability of the workflow we confirmed will support researchers in improving fabrication conditions by visually comparing various fabricated samples.
提供机构:
Taylor & Francis
创建时间:
2022-01-28
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