Mathematical Modeling of Transient Processes in the Base of a Semiconductor Step Recovery Diode

The paper presents an accurate analytical solution describing transient processes in the SRD during charge accumulation and the phase of reverse resistance recovery. The practical implementation of diode behavior modeling for typical values of its physical parameters is considered. As a result of mathematical modeling, distribution curves of minority charge carriers and reverse current pulses are obtained. The influence of strong accelerating and decelerating fields is determined.