Dataset for the article "Forming and Compliance-free Operation of Low-energy, Fast-switching HfOxSy/HfS2 Memristors"

Dataset for the manuscript "Forming and Compliance-free Operation of Low-energy, Fast-switching HfOxSy/HfS2 Memristors" by Aferdita Xhameni et al. The dataset is split in two folders containing the data shown in the main manuscript and in the supplementary information respectively. Within each folder, data are organized in sub-folders corresponding to the figures in the article. The dataset includes: All the raw electrical data (pulsed switching, switching cycles, retention, etc.) of the experimental resistive memories shown in the paper. The data have been acquired via a Keysight B1500 parameter analyzer equipped with remote sensing units (waveform generator/ fast measurement unit) and a Keysight P9243a oscilloscope.Simulated current-voltage (I-V) characteristics of HfOx and HfOx/HfS2 memristors generated by using Synopsys Sentaurus TCAD.

数据集描述：《低能耗、快速切换的 HfOxSy/HfS2 寄存器形成与无约束操作的构建》一文的资料集，由 Aferdita Xhameni 等人编写。该资料集分为两个文件夹，分别包含主文及补充信息中的数据。在每个文件夹内，数据按照文章中的图示组织在相应的子文件夹中。资料集包含以下内容：文中展示的实验性电阻式存储器所涉及的全部原始电学数据（脉冲切换、切换周期、保持等）。数据通过配备远程传感单元（波形发生器/快速测量单元）的 Keysight B1500 参数分析仪以及 Keysight P9243a 示波器获取。此外，还包括利用 Synopsys Sentaurus TCAD 生成的 HfOx 和 HfOx/HfS2 寄存器的模拟电流-电压（I-V）特性。