电吸收调制激光器(EML)阈值功率及消光比测试数据

EML芯片发射光功率测试，所采用设备为日本长江商社定制的芯片全自动测试仪Chiptest。由于EML是由分布式反馈激光器（DFB）与电吸收调制器（EA）相集成，测量需要高度精密、能够稳定输出的电流源和电压源，我们全自动测试仪Chiptest完全满足测试条件。给分布式反馈激光器加载一定区间内电流（比如0-100mA），电流增大步进相同，同时给电吸收调制器加载一定偏压，随着电流的增大，EML芯片会从不激射状态到激射状态，再到功率随着电流增大而增大，最终趋于饱和状态。就会得到不同电流点下，对应的EML芯片发射光功率的值。芯片又自发辐射转为受激辐射的瞬间就是阈值，可计算功率对电流的导数，最大的值就是芯片阈值。在固定电流的情况下，在EA上加0--3v的电压，间隔0.1v，记录下对应的功率，计算出的功率差即为EML芯片的消光比。数据格式。csv，数据大小360kb

EML chip emitted optical power test was conducted using the fully automated Chiptest chip tester customized by Nippon Changjiang Trading Co., Ltd. As an EML chip integrates a distributed feedback laser (DFB) and an electro-absorption modulator (EA), the test requires highly precise current and voltage sources with stable output. Our fully automated Chiptest tester fully meets the test requirements. A current within a certain range (e.g., 0–100 mA) with identical step increments is applied to the DFB, while a certain bias voltage is applied to the EA. As the current increases, the EML chip transitions from a non-lasing state to a lasing state, then to a state where the emitted optical power increases with the current, and finally reaches a saturated state. The corresponding emitted optical power values of the EML chip at different current points can be obtained. The moment when the chip transitions from spontaneous emission to stimulated emission is the threshold current; the maximum value of the derivative of power versus current is used to calculate the chip’s threshold. With the current fixed, a voltage ranging from 0 to 3 V with 0.1 V intervals is applied to the EA, and the corresponding optical power is recorded. The calculated power difference is the extinction ratio of the EML chip. Data format: CSV; file size: 360 KB.

搜集汇总

背景与挑战

背景概述

该数据集提供了电吸收调制激光器（EML）芯片的阈值功率和消光比测试数据，通过全自动测试仪在精密电流和电压控制下测量光功率变化，以CSV格式存储，包含26个文件共约314KB。数据来源于国家重点研发计划项目，由武汉光迅科技股份有限公司创建，适用于电子与通信技术领域的光器件性能分析和研发。