Observing nanoscale strain fields in neutron-irradiated transistors using 3D Bragg Ptychography

Radiation-resistant integrated circuits (ICs) are essential for applications in nuclear and space environments. Understanding the damage mechanisms caused by long-term irradiation (i.e. neutrons, X-rays, etc.) is crucial to achieving this goal, and requires high-resolution, non-destructive imaging of individual transistor layers. Here, we propose to perform three-dimensional Bragg ptychography (3DBP) on neutron-irradiated transistor samples to observe the strain fields associated with neutron-induced damage. These findings will be combined with the electrical characteristics of corresponding devices to decipher the structure-property relationships of neutron-irradiated ICs. Obtaining these insights will help engineers tailor design principles to improve longevity for ICs in extreme radiation environments.