Patterned, low-temperature growth of transition metal dichalcogenides for low resistance raised contacts

Transition metal dichalcogenide (TMD) monolayers are promising channel materials for next-generation electronic devices. A challenge is the high contact resistance between monolayer TMDs and metal contacts, especially for holes. In this regard, raised source/drain contacts are promising. However, the direct, patterned growth of raised contacts at CMOS-compatible temperatures remains largely unresolved. We present plasma-free selenization and sulfurization of metal-oxides at substrate temperatures down to 400 °C, compatible with back-end-of-line (BEOL) thermal budgets. To achieve growth at such temperatures, gas-phase chalcogen precursors are first thermally activated at 950 °C. Films grown on single-crystal monolayer TMDs exhibit high crystal quality as confirmed by transmission electron microscopy. Raised contacts on WSe2 monolayers fabricated using this approach yield a low hole contact resistance of 0.3 kΩ·μm after chemical doping. This process is shown to be applicable to growi..., , # Patterned, low-temperature growth of transition metal dichalcogenides for low resistance raised contacts

Dataset DOI: [10.5061/dryad.b5mkkwht8](https://doi.org/10.5061/dryad.b5mkkwht8)

## Description of the data and file structure

Data for the main figures of the paper entitled \"Patterned, Low-Temperature Growth of Transition Metal Dichalcogenides for Low Resistance Raised Contacts\". Simulated mole fractions of selenium allotropes (Fig. 1b), Raman signal from grown WSe~2~ films based on different activation temperatures (Fig. 1e). Raman signal of WSe~2~ grown from various substrate temperatures (Fig. 2a). X-Ray Diffraction pattern of selenized WO~x~ films (Fig. 2b). Raman signal from various transition metal dichalcogenide films grown with our low-temperature growth method (Fig. 4b, Fig. 4c, and Fig. 4d). Transfer length method data for various lengths of short channel device (Fig. 5b and Fig. 5c). Top-gate device characteristics (Fig. 6b and 6c).

### Files and variables

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