NV6117评估试验前后测试数据，总剂量试验数据、单粒子试验数据

Sample: NV6117 Quantity: 22 pieces Evaluation test: IQCC, IDSS, RDSON data testing before and after 500h dynamic gate bias and 500h reverse bias tests. Equipment used: JC-3191 Total dose test: The irradiation source is a 60Co gamma ray source from Beijing Normal University, with a total irradiation dose of 100krad/h. It is divided into 5 dose nodes, namely 5krad, 10krad, 20krad, 50krad, and 100krad, with a dose rate of 18krad/h. Bias according to the actual circuit used, observe the power supply current and output waveform in real-time during the irradiation process, and conduct parameter testing before and after irradiation. Single Event Burnout (SEB) effect experiment of GaN devices was conducted using the heavy ion accelerator of Lanzhou Institute of Physics. The irradiated ion is 181Ta ion, with a Linear Energy Transfer (LET) value of 75 MeV · cm2/mg and a beam flux of 1 × 104 cm-2. The experimental circuit and method refer to MIL STD-750D standard. To ensure that heavy ions can enter the active area of the device, all devices must be opened before irradiation, and all opened devices must be tested for their electrical characteristics to ensure normal device performance.