Data for: "Quantification of trace-level silicon doping in AlxGa1–xN films using wavelength-dispersive X-ray microanalysis"

This data is the result of Wavelength dispersive X-ray (WDX) spectroscopy data used to measure silicon atom concentrations in doped AlxGa1–xN films using an electron probe microanalyser also equipped with a cathodoluminescence (CL) spectrometer. This new approach, using a method combining data derived from SIMS measurements on both GaN and AlxGa1–xN samples. Further analysis and interpretation of this data is presented in the associated journal article, and figure numbers referred to in the data correspond to those used in this paper: Quantification of trace-level silicon doping in AlxGa1–xN films using wavelength-dispersive X-ray microanalysis, DOI 10.1017/S1431927621000568, Microscopy and Microanalysis