Recharging process of commercial floating-gate MOS transistor in dosimetry application (raw data from journal article)
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This upload contains raw data from the manuscript "Recharging process of commercial floating-gate MOS transistor in dosimetry application". The manuscript was published in Microelectronics Reliability, vol. 126, p.114322, 2021; DOI: https://doi.org/10.1016/j.microrel.2021.114322
The upload consists of a .pdf file of the manuscript and .vsz files with raw data related to the figures in the manuscript. Each .vsz file is linked with raw data from the text files (.txt) and placed in a folder with the name and an ordinal number of the figure in the publication. Additionally, a .pdf output file of the Veusz program (freely available) is placed in each folder.
This work was partly supported by the European Union’s Horizon 2020 research and innovation programme (Grant No. 857558) and the Ministry of Education, Science and Technology Development of the Republic of Serbia (Project No. 43011 and Project No.451-03-9/2021-14/200026).
创建时间:
2024-07-15



