Supporting data for "Gate Screening Effect on Remote Phonon Scattering in MOS-Based Transistors"

This research systematically explores the gate screening mechanism on the Remote Phonon Scattering from high-k gate dielectrics in both n-channel InGaZnO (IGZO) Thin-Film Transistors (TFTs) and p-channel pentacene TFTs, providing insights on enhancing the performance of MOS-based transistors with high-k gate dielectrics. Chapter 2 studies the impact of dielectric annealing temperature on the channel-carrier mobility of IGZO TFTs; Chapter 3 investigates the effect of silicate interlayer thickness on the channel-carrier mobility of IGZO TFTs; Chapter 4 explores the anti-screening effect of IGZO TFTs with double-layered NdHfO/SiO2 high-k gate dielectric; Chapter 5 studies the impact of gate effective carrier mass on the gate screening effect via adoption of different semiconductor materials as gate electrodes of pentacene TFTs; Chapter 6 further investigates the effects of different metal gate electrodes on the channel-carrier mobility of pentacene TFTs. The data in each chapter folder supports the device characterization and parameter extraction of the experiment batch, including the current-voltage characteristics, thickness and morphology measurement results of thin films, lattice structure and crystalline detection of thin films, and vibrating frequency of chemical bonds of materials.