High performance self-powered photodetectors based on graphene nanoribbons/Al2O3/InGaZnO heterojunctions

Self-powered photodetectors which can operate without external power sources hold immense promise in future photodetection systems owing to their zero-power features. To achieve high-performance self-powered optoelectronic devices, efficient separation of electron-hole pairs to generate sufficiently high photocurrents is critical, especially in the case of 2D and 3D hybrid devices. In this work, we successfully synthesized semiconducting graphene nanoribbons (GNRs) with a direct bandgap of 1.80 eV and employed them to construct GNR/Al2O3/IGZO heterostructure for a high-performance photodetector. Due to the built-in electric field in the heterojunctions, this self-powered photodetector exhibits remarkable performance, showing a responsivity of up to 68 mA/W, a detectivity of 8.34×1010 Jones, and rapid response times of 21/20 ms at zero bias. These results demonstrate promising potential of self-powered photodetectors based on GNR/IGZO p-n heterojunctions for applications in the field of optoelectronic devices.