6D strain microscopy of Ge/SiGe parabolic quantum wells on complex virtual substrates

We will use six-dimensional (6D) dark-field X-ray microscopy (DFXM) at the new beamline ID03 to obtain a detailed view of the strain landscape in parabolic Ge/Si1-xGex quantum wells (pQWs) deposited on GeSi virtual substrates for applications in micro- and optoelectronics. In particular, volumetric mapping of the full strain tensor in these alloyed multilayers with fine spatial resolution will be demonstrated. This data will allow refinement of our Finite Element Method (FEM) models to predict device performance and provide a fundamental understanding of plastic relaxation mechanisms in complex epitaxial heterostructures.