Femtosecond laser-written nano-ablations containing bright antibunched emitters on gallium nitride_date

'Antibunched emission from femtosecond laser-written nano-ablations on gallium nitride' dataThe dataset includes Excel files with the raw data for each figure in the manuscript. The filename of the files points towards each labelled subplot in each figure and the necessary description.Figure 1 Laser-written antibunched emitters in gallium nitride (GaN). (a) is a schematic diagram of laser-writing fabrication on GaN and does not contain any raw data to be included as part of this data repository.(b) is an optical microscope image for laser-written GaN, and does not contain any raw data to be included as part of this data repository.(c) is the PL map of the laser-written region marked in (b).(d) is the 1 μm×1 μm atomic force microscopy (AFM) image for the laser-written nano-ablation, and does not contain any raw data to be included as part of this data repository.(e) and (f) are the xy and xz photoluminescence (PL) maps for the laser-written emitter marked in (c).(g) and (h) are the PL emission spectrum and photon emission correlation spectrum for this laser-written emitter. (i) is the time-resolved PL spectrum under double pulse laser excitation, with the insert showing a three-energy level system. (j) is the power-dependent PL saturation measurement. (k) is the PL time trace of the emitter sampled into 10 ms bins under continuous-wave (CW) laser excitation.(l) is the corresponding histogram of the photon distribution.Figure 2. AFM images and yield analysis for the emitters in laser-written nano-ablations in GaN. (a) summarizes the 1 μm×1 μm AFM images of the laser-written nano-ablations with different energies and pulse numbers, and does not contain any raw data to be included as part of this data repository.(b) shows the cross sections from AFM images for different laser pulse numbers and different laser energies. (c) displays the PL emission of laser-written emitters in different pulse numbers as a function of laser-writing energies.Figure 3 Photodynamics study of laser-written emitters in GaN. (a) time-resolved PL study for different emitters and background under double pulse excitation. (b) photon emission correlation spectra for E3Figure 4. The spectra (a-e) and power-dependent PL saturation behaviors (f-j) for E3 during the rapid thermal annealing.