Supplementary Material
收藏DataCite Commons2026-04-10 更新2026-04-25 收录
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https://aip.figshare.com/articles/dataset/Supplementary_Material/31865152
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资源简介：
The Supplementary Material discusses the EDS analysis
results complementary to the cross-sectional TEM measurements
shown in Figs. 3, 4 and 6 (S1) as well as the crystallization
of orthorhombic ScSi during an isothermal anneal at
320{degree sign}C (S2). In addition, it includes a graphical representation
of all possible orthorhombic ScSi orientations when imaged
in cross-section along the Si<110> zone axis (S3).
提供机构：
AIP Publishing
创建时间：
2026-03-26
