Low Excess Noise Al0.8In0.2As0.31Sb0.69 Avalanche Photodiodes Lattice Matched to InAs: Dataset and Figures

Datasets of the figures found in the manuscript "Low Excess Noise Al0.8In0.2As0.31Sb0.69 Avalanche Photodiodes Lattice Matched to InAs"Files in this repository correspond to the results in "Low Excess Noise Al0.8In0.2As0.31Sb0.69 Avalanche Photodiodes Lattice Matched to InAs" submitted to IEEE Transactions on Electron Devices Journal.The figure files contain the graphical figures (.png) found within the manuscript, and the data (.csv) required to replicate the figures.Manuscript Abstract:Indium arsenide (InAs) is an exceptional material for absorbing infrared photons with wavelengths up to 3500 nm, making it ideal for mid-infrared detection. However, the development of high-performance Separate Absorption and Multiplication Avalanche Photodiodes (SAM APDs) has been hindered by the absence of suitable low-noise avalanche materials compatible with InAs absorbers. In this study, we investigate the potential of Al0.8In0.2As0.31Sb0.69 (lattice matched to InAs) as a low-noise avalanche material. We have performed comprehensive Al0.8In0.2As0.31Sb0.69 excess noise measurements using three optical signal wavelengths on a large number of p-i-n and n-i-p devices. Under pure electron injection, Al0.8In0.2As0.31Sb0.69 p-i-n diodes exhibit very low excess noise factors ~ 4 at high gain of 100, corresponding to an effective k of 0.02 - 0.03. In contrast, a small gain of 3 produces very high excess noise factors (> 17) when using hole injection in the n-i-p diodes. The contrasting behavior indicates that in Al0.8In0.2As0.31Sb0.69 electron ionization coefficient is much larger than hole ionization coefficient. As a consequence, low-noise Al0.8In0.2As0.31Sb0.69 avalanche regions emerge as a promising candidate for the avalanche region of SAM APDs designed for mid-infrared applications, such as methane gas sensing and imaging through fog. The design of such SAM APDs should ensure electrons rather than holes are injected into the Al0.8In0.2As0.31Sb0.69 avalanche regions to achieve the lowest possible excess noise factors.