Data from: Synaptic memory devices from CoO/Nb:SrTiO3 junction

Non-volatile memristors are promising for future hardware-based
neurocomputation application because they are capable of emulating
biological synaptic functions. Various material strategies have been
studied to pursue better device performance, such as lower energy cost,
better biological plausibility, etc. In this work, we show a novel design
for non-volatile memristor based on CoO/Nb:SrTiO3 heterojunction. We found
the memristor intrinsically exhibited resistivity switching behaviors,
which can be ascribed to the migration of oxygen vacancies and charge
trapping and detrapping at the heterojunction interface. The carrier
trapping/detrapping level can be finely adjusted by regulating voltage
amplitudes. Gradual conductance modulation can therefore be realized by
using proper voltage pulse stimulations. And the spike-timing-dependent
plasticity, an important Hebbian learning rule has been implemented in the
device. Our results indicate the possibility of achieving artificial
synapses with CoO/Nb:SrTiO3 heterojunction. Compared with filamentary-type
of synaptic device, our device has potential to reduce energy consumption,
realize large scale neuromorphic system, and work more reliably, since no
structural distortion occurs.