Studies on resistive switching mechanisms in RRAM memory structures based on copper (II) oxide

Name: Studies on resistive switching mechanisms in RRAM memory structures based on copper (II) oxide
Creator: Institute of Physics, Polish Academy of Sciences
Published: 2025-09-01T12:19:40+08:00

RepOD Repository for Open Data2025-09-01 更新2026-07-23 收录

RRAM电阻开关机制

氧化铜存储材料

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/UITLRV 数据链接链接失效反馈

官方服务：

资源简介：

Ożga, Monika, 2025, "Studies on resistive switching mechanisms in RRAM memory structures based on copper (II) oxide", https://doi.org/10.18150/UITLRV, RepOD, V1

提供机构：

Institute of Physics, Polish Academy of Sciences

创建时间：

2025-09-01