范德华半导体的非侵入式数字蚀刻数据集

本项目基于对金属热扩散机制和选择性刻蚀的深入理解，结合表面缺陷工程、受控单原子层扩散与湿法刻蚀工艺，在国际上首次展示了具有原子精度的无损数字式刻蚀能力，每次刻蚀可完美地减薄一层，且刻蚀后的半导体性能（即，晶格缺陷和电学迁移率）保持不变；整套工艺与CMOS完全兼容，结合光刻技术可实现复杂的原子级厚度图案雕刻。This work is grounded in a thorough understanding of metal thermal diffusion mechanisms and selective etching, integrating surface defect engineering, controlled single-atomic-layer diffusion and wet etching processes. For the first time globally, we demonstrate atomically precise, nondestructive digital etching capability: each etching step perfectly thins the material by one atomic layer, while the post-etched semiconductor properties (i.e., lattice defects and electrical mobility) remain unchanged. The entire process is fully compatible with CMOS technology, and when combined with photolithography, it enables the fabrication of complex patterns with atomic-level thickness control.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于范德华半导体的非侵入式数字蚀刻技术，基于金属热扩散和选择性刻蚀机制，实现了原子级精度的无损刻蚀，每次刻蚀可减薄一层半导体材料，同时保持晶格缺陷和电学迁移率等性能不变。整套工艺与CMOS兼容，结合光刻技术可用于复杂的原子级厚度图案雕刻，适用于二维层状材料的精细加工。数据集由南京大学发布，包含56个文件，总数据量93.48MB，来源于国家重点研发计划项目。