EnhancingtheTriboelectricChargesandManipulatingthe ResistanceofaTeThinFilm
收藏中国科学院兰州化学物理研究所科学数据中心2025-12-11 更新2026-01-10 收录
下载链接：
https://ggjsfwdata.licp.cn/dataDetails/82ca16e6cee043a69e9b4132d9443268
下载链接
链接失效反馈官方服务：
资源简介：
The studyof contact electrification(CE)betweenmetals
and semiconductors has immense research value and relevance in the
applicationofmicro-andnanosystems. In this paper, a tellurium(Te)
nanofilmof largesizeandhighqualitywasgrownonthesurfaceofasilicon
wafer by using the chemical vapor deposition (CVD) technique. The
contactelectrificationbetweentheAFMtip(coatedwithPt/Ir)andtheTe
thin film is systematically analyzed using conductive atomic force
microscopy (CAFM) andKelvin probe forcemicroscopy (KPFM). At
zerobias, thefrictional chargesaredeterminedtobenearly6.517μC/m2
withonerubcycle.Furthermore, thenumberof frictional chargescanbe
increasedto−40.729μC/m2byapplyingarelativelysmall voltage(3V).
Basedonthedensityfunctional theory(DFT)calculationandenergybandtheory, themodulationofcontactelectrificationcharges
canbeattributedtothemodulationof theTeFermi level.More importantly, the resistanceofTe thinfilms canbeeffectively
manipulatedby regulating the triboelectric chargedensity. This applicationoffers effective insights into themanipulationand
influenceof frictionchargesonnanodevices.
提供机构：
中国科学院兰州化学物理研究所科学数据中心
创建时间：
2025-12-11
