Thin film growth simulation with noise reduction techniques in (2+1) dimensional substrate systems

Two noise reduction techniques: the long surface diffusion length noise reduction technique and multiple hit noise reduction technique are used to produce smooth film surface in thin film growth simulation. The long surface diffusion length technique is equivalent to the increase in growth temperature while the multiple hit technique is a computational technique. We have simulated thin film growth by using Das Sarma-Temborenea (DT) model with the two noise-reduction techniques in two-dimensional substrates to compare whether the multiple hit noise reduction technique is equivalent to the long surface diffusion length noise reduction technique. Our simulation results show that both techniques are equivalent for the study of layer-by-layer growth which is very smooth film surface growth indicated by oscillations in surface roughness during early growth time. Both techniques produce a smoother film surfaces. Additionally, we find that the damping time t[subscript c], the time when the layer-by-layer damps out, depends on the noise reduction parameters with power law relations: t[subscript c] ~(