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Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β-Ga2O3

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B2FIND2026-04-11 收录
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https://b2find.eudat.eu/dataset/aed27c81-bd34-5984-b02d-82f7e29d3774
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We investigate formation energies of C, Si, and Ge defects in β-Ga2O3 through hybrid functional calculations. We find that the interstitial defects of these elements generally...
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