Mid-infrared GeTe4 waveguides on silicon with a ZnSe isolation layer

GeTe4 waveguides were designed and fabricated on silicon substrates with a ZnSe isolation layer. GeTe4 has a refractive index of 3.25 at a wavelength of 9 µm and a lower refractive index isolation layer is needed to realise waveguides on silicon. Numerical modelling was carried out to calculate the thickness of the isolation layer (ZnSe, refractive index ~2.4) required to achieve low loss waveguides. For a loss between 0.1 and 1.0 dB/cm it was found that a ~ 4 µm thick ZnSe film is required at a wavelength of 9 µm. ZnSe thin films were deposited on silicon, GeTe4 waveguides were fabricated by lift-off technique and were characterised for mid-infrared waveguiding.