相关数据集
InSe-GeSe-SnS异质结数据集
最近，通过堆叠不同的二维 (2D) 材料来构建范德华 (vdW) 异质结被认为是获得所需性能的有效策略。本项目中，通过第一性原理计算，我们从理论上发现2D n -InSe/ p -GeSe(SnS) vdW异质结是具有典型II型能带排列的直接带隙半导体，有利于光生电子和空穴对的有效分离。此外，它们具有高光吸收强度（～ 10^5 ）、宽光谱宽度和优异的载流子迁移率（～ 10^3 cm^2 V ^-1
国家基础学科公共科学数据中心220
Dataset for the paper "Transport measurements on van der Waals heterostructures under pressure"
Dataset for the paper "Transport measurements on van der Waals heterostructures under pressure". The folder "KeroseneTest" contains data for fig. 3. The folder WALcompare contains data for fig. 4.
NIAID Data Ecosystem70
Semiconducting van der Waals interfaces as artificial semiconductors
Data set for: Nano Lett. 2018, 18, 5146−5152 https://doi.org/10.1021/acs.nanolett.8b02066
DataCite Commons2026-05-05 更新50
Self-Aligned van der Waals Heterojunction Diodes and Transistors
Data corresponds to the demonstration of a novel self-aligned method to fabricate transistors and van der Waals heterojunctions based on 2D materials. Monolayer MoS2 is grown by chemical vapor deposit
DataCite Commons2024-02-26 更新90
Band Gap Opening in Bilayer Graphene-CrCl3/CrBr3/CrI3 van der Waals Interfaces
Data set for: Nano Lett. 22, 16, 6760–6766 (2022) https://doi.org/10.1021/acs.nanolett.2c02369
DataCite Commons2026-05-05 更新50
