Data for: "Structure and Density of Silicon Carbide to 1.5 TPa and Implications for Extrasolar Planets"

There has been considerable recent interest in the high-pressure behavior
of silicon carbide, a potential major constituent of carbon-rich
exoplanets. In this work, the atomic-level structure of SiC was determined
through in situ X-ray diffraction under laser-driven ramp compression up
to 1.5 TPa; stresses more than seven times greater than previous static
and shock data. Here we show that the B1-type structure persists over this
stress range and we have constrained its equation of state (EOS). Using
this data we have determined the first experimentally based mass-radius
curves for a hypothetical pure SiC planet. Interior structure models are
constructed for planets consisting of a SiC-rich mantle and iron-rich
core. Carbide planets are found to be ~10% less dense than corresponding
terrestrial planets.