Data underlying the publication: Forming-free HfOx-based memristors

This research aims to develop the new type of memristors, named ReRAM devices, without electroforming steps, which will be more energy efficient and cost-effective. Using the simplified CMOS-compatible manufacturing techniques in the cleanroom, we fabricated the Pd-based memristor that can be free of electroforming. The dataset includes the raw CSV files collected from semiconductor analyzer B1500A that shows the performance of the devices, which is eliminated from the electroforming step.

本研究旨在开发无需电forming步骤的新型忆阻器（memristor），即阻变随机存取存储器（Resistive Random Access Memory，ReRAM）器件，该器件可实现更高的能源利用效率与更优的成本效益。本研究在洁净室中采用简化的兼容互补金属氧化物半导体（Complementary Metal-Oxide Semiconductor，CMOS）制造工艺，制备出了可无需电forming步骤的钯（Pd）基忆阻器。本数据集包含从半导体分析仪B1500A采集的原始逗号分隔值（Comma-Separated Values，CSV）文件，这些文件记录了未经过电forming步骤的器件性能。