Ge-Sb Thin Films Patterned by Heat-Mode Lithography
收藏DataCite Commons2025-04-27 更新2025-04-16 收录
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A binary Te-free phase-change material Ge9.15Sb90.85 (GS) is investigated as the heat-mode resist. A high etching selectivity ratio can be achieved by matching a suitable developer. A reasonable explanation for the positive development is proposed based on the chemical binding energy analysis. High-resolution relief patterns are fabricated on the GS films by laser direct writing and wet etching. It reveals that GS is a promising heat-mode resist for the fabrication of photonic devices.
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Science Data Bank
创建时间:
2024-05-15



