Data for "Gold implanted germanium photoswitch for cavity dumping of a free-electron laser"

Measurements were carried out in ELBE 113 c lab. Free electron laser (FEL) pulses with a wavelength ranging from 6 to 90 µm from the FELBE laser operating at its maximum power level were used. Photoswitching of Ge and Ge:Au samples were carried out using a 1 kHz Ti:Sapphire Amplifier system at 800 nm. The data used in the paper is arranged in subfolders 1, 2, and 3. The description is as follows<br>
1. Scheme of the experiment (used in Figure 1 and shows the idea of the experiment)<br>
2. FEL pulse picking traces from photoswitched Ge and Ge: Au samples were recorded using an oscilloscope with 1 GHz bandwidth (Keysight InfiniiVision DSOX4104A).<br>
Relevance: This data is used in Figures 2 and 3. This measurement showed the photoswitching attributes in both reflection and transmission geometry for the Ge and Ge: Au samples and suitability of Ge:Au sample for efficient cavity dumping.<br>
3. Photoinduced reflectivity measurements for the Ge: Au sample as a function of the time delay between FEL pulses and the pulses from a kHz amplifier system is recorded. The fluence required to couple out FEL wavelengths with an efficiency of at least 50 % reflectivity and Matlab scripts used for simulation of photoinduced reflectivity for the same FEL wavelengths.<br>
Relevance: This data is used in Figure 4 and shows the fluence requirements of the Ge:Au photoswitch and also a faster recovery time of sub-ns, much shorter than the FEL pulsing period of 77ns.