Strain mapping of structural defects in a functional Si/SiGe QuBus
收藏ESRF Portal2027-01-01 更新2026-04-23 收录
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https://doi.esrf.fr/10.15151/ESRF-ES-1875461656
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资源简介：
We will employ Scanning X-Ray Diffraction Microscopy to map the spatial strain distribution in the 8 nm Si/Si0.7Ge0.3 quantum well (QW) layer of a a functional Quantum Bus for coherent electron shuttling in a position where an electrostatic blockade of electron transport was observed. SXMD will determine weither the electric barrier is induced by a structural defect in the semiconductor layers, defective gate electrodes or if it is not related to structural changes, i.e. cause by a point defect.
提供机构：
ESRF,CS 40220,38043 GRENOBLE Cedex 9,FRANCE,38043,GRENOBLE,FRANCE
创建时间：
2027-01-01
