I-V Analysis of photodetector for different wavelength

Name: I-V Analysis of photodetector for different wavelength
Creator: Kumar Dwivedi, Ajay; Tripathi, Shweta; Bajpai, Tulika; Kumar Nagaria, Rajendra
Published: 2026-04-17T17:24:46+08:00

IEEE2026-04-17 收录

光电探测器表征

异质结器件性能

数据链接：

https://ieee-dataport.org/documents/i-v-analysis-photodetector-different-wavelength 数据链接链接失效反馈

官方服务：

资源简介：

This The present letter proposes Al/Graphene Oxide (GO)/WSe2/ITO heterojunction based visible-NIR photodetector fabricated by the low-cost solution method. The p-type WSe2 makes a heterostructure with the n-type Graphene Oxide (GO) material deposited over ITO coated PET substrate. The developed device results in a very high  responsivity (A/W)  and external quantum efficiency (EQE) value of 8000 and 1150, 1.5 x 106 % and 0.09 x 106 %,  at 650nm (Vis) and 1500nm (NIR) wavelength (at -2V bias). 

提供机构：

Kumar Dwivedi, Ajay; Tripathi, Shweta; Bajpai, Tulika; Kumar Nagaria, Rajendra

I-V Analysis of photodetector for different wavelength

资源简介：

相关数据集