Dataset for "Wurtzite InP Microdisks: from Epitaxy to room temperature Lasing"

Metastable wurtzite crystal phases of conventional semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and beyond nanowire size constraints has remained elusive. In this work, the epitaxy of wurtzite InP microdisks and related geometries on insulator for advanced optical applications is explored. This is achieved by an elaborate combination of selective area growth of fins and a zipper-induced epitaxial lateral overgrowth, which enables co-integration of diversely shaped crystals at precise position. The grown material possesses high phase purity and excellent optical quality characterized by STEM and μ-PL. Optically pumped lasing at room temperature is achieved in microdisks with a lasing threshold of 365 μJ/cm2. Our platform could provide novel geometries for photonic applications.

传统半导体的亚稳态纤锌矿（wurtzite）晶相凭借其宽可调的直接带隙范围，在高性能电光器件领域拥有巨大应用潜力。然而，制备出高质量且突破纳米线尺寸限制的此类材料，长期以来一直难以实现。本研究针对先进光学应用，探索了在绝缘衬底上生长纤锌矿型磷化铟（InP）微盘及相关几何结构的外延技术。该目标通过鳍状结构选择性区域生长与拉链诱导外延横向过生长的精妙结合得以实现，这一方案可实现不同形状晶体在精确位置的共集成。所生长的材料具有高相纯度与优异光学质量，这一特性通过扫描透射电子显微镜（STEM）与微区光致发光（μ-PL）表征得到验证。该微盘在室温下实现了光泵浦激光发射，激光阈值为365 μJ/cm²。本研究开发的平台可为光子学应用提供全新的几何结构方案。