Replication Data for: Slide and twist: Manipulating Polarization in Multilayer hexagonal Boron-Nitride

This study delves into the intriguing realm of across-layer sliding ferroelectricity in multilayer hexagonal boron nitride (hBN) and gallium nitride (hGaN), with the aim of manipulating out-of-plane polarization. By examining the effects of sliding single or dual layers in various stacking configurations of hBN, we uncover pathways for polarization sign reversal with energy barriers ranging from 5 to 30 meV/f.u., highlighting their experimental viability. Our findings reveal that singleinterface sliding is energetically more favorable, presenting lower barriers than multiple. Specificpathways exhibit stable polarization plateaus, where polarization remains constant during specific sliding phases. These stable states hold promise for robust polarization control. Additionally,
rotated multilayer structures maintain a consistent net out-of-plane polarization across different rotation angles. In trilayer ABT structures, rotating the top layer and sliding the bottom layer can reverse polarization, enhancing the possibilities of device design. Although the primary focus is on hBN, similar phenomena observed in hGaN suggest a broader applicability for this class of polar materials. The identified energy barriers support the feasibility of fabricating devices based on these multilayer structures.