Research data supporting "Engineered High Endurance in WO3-based Resistive Switching Devices Via a Guided Filament Approach"

The dataset comprises raw and processed measurement files corresponding to each figure in the manuscript. The files are organized into folders that reflect the different experimental measurements—electrical performance (including I–V, endurance, and retention tests), structural and compositional characterization (STEM, EDS, XRD), scanning probe microscopy (AFM), and supplementary data. The nomenclature used indicates the sample composition, device geometry, and applied measurement conditions. Details of folder content is following: Fig1a: contain current–voltage (I–V) curves. These data files document the initial soft forming and subsequent switching cycles, demonstrating the reproducibility and stability of the resistive switching behavior. Fig. 1b: contain endurance measurements. They capture the device’s performance over an extended number of switching cycles under defined set (positive voltage) and reset (negative voltage) operations. Fig1c: contain the processed performance metrics that were used to generate the summary plots of electrical performance. Fig1d–e: contain detailed endurance testing across varioues devices. Fig2a: contain binary state retention (high and low resistance states) over time and detail the stability of the switching characteristics. Fig2b: contain the multi level retention performance of the devices at distinct set voltages. This group is used to demonstrate the feasibility of achieving multiple distinct resistance states without the need for current compliance. Fig2c: contain data from devices with varying top electrode diameters (25, 50, and 100 µm). Fig2d: same as “Fig.2c”. Fig3a: contain STEM data showing the nanocomposite microstructure. Fig3b: contain elemental mapping data (EDS) that reveal the spatial distribution of W, Ce, and O in the film. Fig3c: contain STEM data at the film–substrate interface, essential for understanding the epitaxial layer formation. Fig3d: contain EDS data. Fig3e: contain X-ray diffraction file to identify the phases present and to assess the film’s orientation. Fig3f: contain reciprocal space maps for the lattice alignment of the film with the substrate. Fig4a–b: contain AFM data that record the surface topography and current mapping obtained via conductive atomic force microscopy. These data illustrate the distribution and initial location of the conductive filaments. Fig4c: contain in-situ AFM data for the dynamic process of filament formation and subsequent recovery. These data support the guided filament model described in the manuscript. SI (FigS1–S15): The dataset also provides extended datasets as supplementary information (e.g., additional endurance, retention, XPS, and other data). .csv files: Mainly raw electrical measurement data such as I–V curves, endurance cycles, retention. May contain some processed data. .xrdml, .ascnxl files: Raw X-ray diffraction data. .emd, .emi files: Electron microscopy data. .spm files: AFM/CAFM data.