Data supporting publication entitled "Disentangling the impact of point defect density and carrier localisation enhanced Auger recombination on efficiency droop in (In,Ga)N/GaN quantum wells"
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资源简介:
Phototluminescence intensity vs carrier density for three samples grown at different temperatures; Phototluminescence transients for these samples; Calculated radiative and Auger recombination coefficients.
创建时间:
2023-05-12



