five

Research data supporting ''The effect of facet lines on critical current density and trapped field in bulk RE-Ba-Cu-O single grains''

收藏
www.repository.cam.ac.uk2025-01-21 收录
下载链接:
https://www.repository.cam.ac.uk/items/94c21c7e-d328-4765-9575-1382e0e622ac
下载链接
链接失效反馈
官方服务:
资源简介:
Detailed current density measurements and the trapped fields measurements which show the effects of Jc distribution. Figure3 & Figure 4(a,c) (Tc and Jc along a faceline of sample 20181123 F7-1).xlsx are the results of critical transition temperature Tc and M-H loops measured using MPMS in the Maxwell centre. The critical current density Jc is calculated from the M-H loops for each cuboid at 77 K for an applied field cycle of 0 to 7 T to 0 T using the Bean model. All the data of 20 pieces of superconductor bulk samples in figure 1 is in this .xlsx file. The results are shown in figure 3 and 4. All .opj Origin 8.5 files are showing the measurements of trapped fields which are the indicators of samples' quality. We show the readers the shapes and magnitudes of trapped field for discussing ‘’The effect of facet lines on critical current density and trapped field in bulk RE-Ba-Cu-O single grains‘’. Each sample to be measured was field cooled at 77 K in an applied magnetic field of 1.0 T prior to 2D trapped field mapping using a rotating Hall sensor array. Origin was used to record the original data. These files here in .opj recorded the original data and their generated figures.

详尽当前密度测量数据以及受陷场测量数据,展现了临界电流密度分布的影响。图3与图4(a,c)(20181123 F7-1样品的晶面线上的Tc和Jc)所展示的.xlsx文件是利用Maxwell中心MPMS测量的临界转变温度Tc及M-H回线的结果。每个立方体的临界电流密度Jc通过Bean模型计算得出,测量条件为在77K下,施加磁场从0至7T再降至0T的循环。图1中展示的20件超导块体样品的所有数据均包含在此.xlsx文件中。结果如图3和4所示。所有.opj Origin 8.5文件展示了受陷场测量,这些测量是样品质量的指示器。我们向读者展示了受陷场的形状与幅度,以讨论‘’晶面线对块体RE-Ba-Cu-O单晶临界电流密度及受陷场的影响‘’。每个待测样品在2D受陷场映射前,在1.0T的施加磁场中于77K进行场冷处理。原始数据由Origin软件记录。这些.opj文件记录了原始数据及其生成的图形。
提供机构:
Apollo
二维码
社区交流群
二维码
科研交流群
商业服务