in situ X-Ray Diffraction Study of Crystallization Process in New Chalcogenide based Phase Change Materials

In the field of Phase-Change Memory (PCM), Ge2Sb2Te5 is the most studied material and is considered as the standard. In the last decade, the physico-chemical
exploration of new stoichiometries has led to significant improvements in the properties of PCM devices. In particular, Ge-enrichment of Ge2Sb2Te5 (GGST)
combined with N-doping to increase the thermal stability. Investigations of crystallization kinetics has been shown to play a key role in understanding the operation
of PCM devices by emulating the material behaviour in the integrated cell. To prepare the next generation of PCM devices, we are investigating two new families of
materials derived from the GGST system with the addition of one dopant each. First ex situ XRD analyses revealed fast and complex crystallization kinetics
depending on the amount of dopant added. We want to confirm the first trends observed by carrying out in situ XRD measurements at specific heating ramps to
follow up the crystallization process.