Strain mapping in a quantum shuttling device

We will employ Scanning X-Ray Diffraction Microscopy to map the spatial strain distribution in the 8 nm Si/Si0.7Ge0.3 quantum
well (QW) layer of a a functional Quantum Bus for coherent electron shuttling in a position where an electrostatic blockade of electron
transport was observed. SXMD will determine weither the electric barrier is induced by a structural defect in the semiconductor layers,
defective gate electrodes or if it is not related to structural changes, i.e. cause by a point defect. The previous attempt was unsuccesful due to the weak intensity of diffraction from the 10 nm Si QW layer, we anticipate that the recently comissioned KB mirrors at ID01 will provide a focussed beam with increased flux, making this measurement feasible