Quantitative correlation of Pulsed X-ray and Heavy Ion induced Single Event Effects: Mechanism-resolved map of SEE response against facility

The goal of the proposed experiment is to determine under which conditions focused pulsed X-rays could emulate Heavy Ions (HI) for Single Event Transient (SET) and Single Event Latchup (SEL) characterization/selection of Silicon-based integrated circuits (IC). Devices from different technologies will be irradiated to assess how beam configuration affects SEE signatures, and results will be benchmarked against heavy-ion data to identify optimal beam parameters.