Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress
收藏DataCite Commons2021-11-26 更新2025-04-17 收录
下载链接：
https://eprints.soton.ac.uk/451681/
下载链接
链接失效反馈官方服务：
资源简介：
Data set for: Hillier, J. W. et al. (2021). Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress in IOP Journal of Physics D: Applied Physics
提供机构：
University of Southampton
创建时间：
2021-11-26
