Supplementary material

Supplementary material for further details on the simulation method, cross-sectional TEM images, linear regression of the capacitance-area relationship, and comparison between the electrical characteristics of the Au(bottom)/DNTT/Al(top) and Al(bottom)/DNTT/Au(top) diodes本补充材料用于详细阐述以下内容：模拟方法、横截面透射电子显微镜（Transmission Electron Microscopy, TEM）图像、电容-面积关系的线性回归分析，以及Au（底层）/DNTT/Al（顶层）与Al（底层）/DNTT/Au（顶层）二极管的电学特性对比。