Tight binding calculations

Data from tight-binding calculations. Each row corresponds with one disorder configuration. E: energy D: density of states nu: filling (integral of D) G: transverse conductance t: hopping a: lattice constant w: disorder strength LW: lead width W: system width L: system length xi: disorder correlation length B: magnetic field strength phi: flux per unit cell omega: cyclotron frequency lB: magnetic length seed: random seed for disorder generation maxE: maximum E to calculate eps: level broadening num_realizations: number of realizations used in run