Supplementary Materials
收藏DataCite Commons2025-07-30 更新2026-01-12 收录
下载链接：
https://aip.figshare.com/articles/dataset/Supplementary_Materials/29504711
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资源简介：
The supplemental material provides detailed molecular beam epitaxy (MBE) growth conditions for arsenic-doped single-crystal CdTe thin films on Si(211) substrates, including a description of in-situ Te overpressure anneals. It also includes secondary ion mass spectrometry (SIMS) data used to determine average sheet incorporation (ASI) of arsenic, as well as charge carrier mobility measurements across a range of rapid thermal processing (RTP) temperatures.
提供机构：
AIP Publishing
创建时间：
2025-07-08
