WSE2/CUO PHOTODETCTOR ANALYSIS

This letter reports a Al/WSe2/CuO/ITO structure based broadband photodetector. The low cost spin coating technique is utilized to deposit, p-type WSe2 film and n-type CuO film. The Al contacts were deposited over WSe2 film using thermal evaporation unit. The suggested photodetector gives the broad photo response with maximum Responsivity(A/W) and External Quantum Efficiency (EQE) value of 3099 A/W, 3680A/W, and 493A/W; 1.20 × 106%, 1.52× 106% and 2.04 × 105% at 350nm (UV), 500nm (visible) and 950nm (IR) under application of -2V bias. The EQE value beyond 100% are attributed to trap assisted photomultiplication mechanism.

本信函报道了一种基于Al/WSe2/CuO/ITO结构的宽带光电探测器。采用低成本旋涂技术，沉积p型WSe2薄膜和n型CuO薄膜。通过热蒸发单元在WSe2薄膜上沉积Al接触。所提出的探测器展现出广泛的photo response，其最大响应度（A/W）和外量子效率（EQE）值分别为3099 A/W、3680 A/W和493 A/W；在350nm（紫外）、500nm（可见光）和950nm（红外）波长下，施加-2V偏压时，其外量子效率分别为1.20 × 106%、1.52× 106%和2.04 × 105%。超过100%的EQE值归因于陷阱辅助的光倍增机制。