Plasma-Assisted Isotropic ALE Mechanisms of SiO₂
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https://orkg.org/comparison/R1562478
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资源简介：
Summarizes isotropic ALE performed in plasma environments using CF₄/NH₃, NF₃/NH₃, or NF₃/H₂ mixtures.
Lists stepwise mechanisms (AFS formation → heating decomposition), process temperature, and etch rates.
Compares the influence of plasma chemistry on ammonium-fluorosilicate formation and removal efficiency.
提供机构：
Open Research Knowledge Graph
创建时间：
2025-11-10
