Toward Scalable Manufacturing of Doped Silicon Nanopillars for Thermoelectrics via Metal-Assisted Chemical Etching - Data

These data are part of a systematic study on the localized and non-localized etch rates of silicon nanopillars produced using Metal-Assisted Chemical Etching (MACE) for thermoelectric applications. Specifically, they represent a collection of etch rates as a function of doping level for both p-type and n-type silicon, using both 1-pot and 2-pot MACE processes. Data are available in both .csv and .xlsx format.