Data associated with "The Impact of Dislocation-Mediated Etching on the Structure of Porous GaN" by J. Zhang et al.

Surface pit densities for n-type GaN samples electrochemically etched aqueous oxalic acid electrolyte (0.25 mol·dm-3) at a range of voltages are provided. Data is provided in xslx format. There are four tabs with data, relating to four samples. with four different Si doping densities resulting in four different values of carrier density, n, (2.8 × 1019 cm-3, 7.7 × 1018 cm-3, 3.4 × 1018 cm-3, and 1.8 × 1018 cm-3). These carrier densities are indicated on the relevant tabs. On each tab, there is a list of voltages applied during electrochemical etching, and then the surface pit density (measured using atomic force microscopy) and the standard deviation of surface pit density across multiple measurements are tabulated for each voltage. Data for an unetched control sample (labelled “Non-etched, no SiH4 treatment”) and an unetched sample treated with SiH4 (labelled “non etched, silane treated”) to increase the size of dislocation pits are also provided.