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Non-invasive strain mapping in Si-nitride strain liners on silicon

B2FIND2026-04-25 收录

半导体应变工程

晶格应变表征

数据链接：

https://b2find.eudat.eu/dataset/38cbce1b-1104-5e2d-ac60-fdd50cf34c0f 数据链接链接失效反馈

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资源简介：

We aim for a non-invasive, microscopic characterization of lattice strain that is introduced into silicon by Si-nitride based stress liners for the purpose of enhanced carrier...

应用场景：

半导体应变工程

MOSFET缺陷分析

Functional properties of power MOSFETs depend decisively on residual strain fields across near-surface transistor cross-sections, which are accumulated during multiple processing steps, decisively inf

DataCite Commons2021-07-03 更新70

In situ Control of Atomic-Scale Si Layer with Huge Strain in the Nanoheterostructure NiSi/Si/NiSi through Point Contact Reaction

纳米异质结构制备

半导体应变工程

Nanoheterostructures of NiSi/Si/NiSi in which the length of the Si region can be controlled down to 2 nm have been produced using in situ point contact reaction between Si and Ni nanowires in an ultra

NIAID Data Ecosystem70

Coupled mechanical and optoelectronic characterization on sheared Si thin film

半导体应变工程

纳米尺度应变表征

Strain engineering of semiconductors presents an enormous potential to vary their electronic properties by modifying their electronic bands, charge carrier population and mobility, bandgap, etc. It op

ESRF Portal2025-01-01 更新30

Dataset for Strain-Engineering in Germanium Membranes towards Light Sources on Silicon

半导体应变工程

硅基光源开发

Data supporting: Burt, D, Al-Attili, A, Li, Z, Liu, F, Higashitarumizu, N, Ishikawa, Y, Querin, O, Gardes, F, Kelsall, R, Saito, S & Oda, K 2017, 'Strain-engineering in germanium membranes towards

DataCite Commons2020-09-19 更新70

straining of Si membranes

半导体应变工程

材料结构分析

straining of Si membranes, step by step while following the strain by diffraction

DataCite Commons2023-10-24 更新50