Highly anisotropic interlayer magnetoresitance in ZrSiS nodal-line Dirac semimetal
收藏doi.org2025-03-26 收录
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https://doi.org/10.24435/materialscloud:2019.0074/v1
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In this work, we investigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. Combining the Fermi surfaces calculated from first principles with the Boltzmann’s semiclassical transport theory, we reproduce all the prominent features of the unusual behavior of the in-plane and out-of-plane AMR.We can conclude that the dominant contribution the cusplike AMR lies in open orbits of the hole pocket and, in general, AMR is strongly influenced by charge compensation effect and the off-diagonal conductivity tensor elements, which give rise to peculiar butterfly-shaped AMR.
在本项研究中,我们探讨了层状节点线狄拉克半金属ZrSiS的角依赖磁阻(AMR)现象,针对平面内和平面外电流方向进行了分析。通过结合由第一性原理计算得出的费米面与玻尔兹曼半经典输运理论,我们重现了平面内和平面外AMR异常行为的主要特征。我们可以得出结论,类似于尖点状的AMR的主要贡献来自于空穴口袋的开放轨道,而且一般而言,AMR受到电荷补偿效应和对角线以外的电导张量元素强烈影响,这些因素共同导致了独特的蝴蝶形状AMR。
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