6T and 8T FinFET SRAM Power Gating Data

Name: 6T and 8T FinFET SRAM Power Gating Data
Creator: Computer Engineering Program, California State University, Fullerton
Published: 2018-10-01T00:00:00+08:00

Zenodo2018-10-01 更新2026-04-07 收录

FinFETSRAM低功耗设计

功率门控技术

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https://zenodo.org/record/2605726 数据链接链接失效反馈

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资源简介：

Graphs and underlying data for 6T and 8T FinFET SRAM schemes using power gating. These data and graphs accompany "Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells with Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating" submitted to <em>IEEE Transactions on Circuits and Systems II: Express Briefs</em> on October 1, 2018.

提供机构：

Computer Engineering Program, California State University, Fullerton

创建时间：

2018-10-01

6T and 8T FinFET SRAM Power Gating Data

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