DC electrical characterization data for RRAM devices with PECVD silicon-oxide resistive switching layer
收藏DataCite Commons2025-09-02 更新2026-05-04 收录
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https://repo.pw.edu.pl/info/researchdata/WUT2507164131c5439abb62e1d72ac79347/
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资源简介：
<p>DC electrical characterization data for RRAM devices (Al/SiOx/Cr, Ni/SiOx/Cr) presented in the paper https://doi.org/10.1016/j.sse.2025.109208.<br /><br /></p>
提供机构：
Warsaw University of Technology
创建时间：
2025-09-02
