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Syntheses and X-ray Diffraction, Photochemical, and Optical Characterization of Cu<sub>2</sub>Si<i><sub>x</sub></i>Sn<sub>1-</sub><i><sub>x</sub></i>S<sub>3</sub> (0.4 ≤ <i>x</i> ≤ 0.6) for Photovoltaic Applications

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The study of the pseudobinary system Cu2SnS3−Cu2SiS3 shows that a solid solution (Cu2SixSn1-xS3) exists in the range 0.4 ≤ Si/(Sn+Si) ≤ 0.6. Based on diffuse reflectance and photoelectrochemical measurements these compounds show potential as absorber materials for photovoltaic devices. The compounds were prepared at 850 °C from copper sulfide, silicon, tin, and sulfur and were analyzed with single-crystal (for x ≈ 0.40) and powder diffraction techniques. Optical band gaps of 1.25, 1.35, and 1.45 eV were observed for the three compositions x = 0.39, 0.48, and 0.61; cathodic photocurrent occurring is significant.

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2007-02-19
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